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Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy

TitoloProperties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2002
AutoriBrandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander
RivistaJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Paginazione1626-1639
ISSN10711023
Parole chiaveCathodoluminescence, Composition effects, Electric field effects, Epitaxial growth, Gallium nitride, Indium nitride, Metal stable growth, Molecular beam epitaxy, Photoluminescence, Plasma applications, Plasma assisted molecular beam epitaxy, Secondary ion mass spectrometry, Semiconducting indium compounds, Semiconductor quantum wells, Synthesis (chemical), Transition energy, Transmission electron microscopy
Abstract

(In,GaN)/GaN MQWs were synthesized by plasma-assisted MBE. The structural properties of these MQWs were investigated with particular emphasis on an accurate determination of their actual structural parameters. In surface segregation affected the optical properties of the samples.

Note

cited By 10; Conference of Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference Date: 6 January 2002 Through 10 January 2002; Conference Code:59676

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0035982597&doi=10.1116%2f1.1491540&partnerID=40&md5=1bdb353ad63136e8015e34578c4208f9
DOI10.1116/1.1491540
Citation KeyBrandt20021626