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A novel thermal plasma-based technology for submicronic silicon carbide production at pilot scale [Nova tecnologia baseada em plasma térmico para produção de carbeto de silício submicrométrico em escala piloto]

TitoloA novel thermal plasma-based technology for submicronic silicon carbide production at pilot scale [Nova tecnologia baseada em plasma térmico para produção de carbeto de silício submicrométrico em escala piloto]
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2019
AutoriFreda, C., Cornacchia G., Donatelli Antonio, Corrado M., Martino Maria, De Girolamo Del Mauro Anna, and Galvagno Sergio
RivistaCeramica
Volume65
Paginazione92-98
ISSN03666913
Abstract

Submicronic powder of silicon carbide was synthesized in a pilot novel radiofrequency plasma torch reactor. The precursors were pyrolysis char and silica powders both with micrometric size. The mass rate of the precursor powder varied in the range 600-2500 g/h. The maximum test time was approximately 3 h. With the goal to increase the process yield, several technical measures were implemented. Silicon carbide yield was above 70 wt% when the plasma flame was confined by a tube that prolonged the residence time of the reactants at the useful temperature for the advancement of reaction. The silicon carbide was characterized by XRD, SEM, and DLS. Both α and β-crystalline phases were detected. © 2019 Associacao Brasileira de Ceramica. All Rights Reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85061140861&doi=10.1590%2f0366-69132019653732533&partnerID=40&md5=6528a433c3ee108f2c77969ba992da62
DOI10.1590/0366-69132019653732533
Citation KeyFreda201992