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Influence of doping concentration on the photoluminescence of silicon nanocrystals

TitoloInfluence of doping concentration on the photoluminescence of silicon nanocrystals
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2003
AutoriLettieri, S., Maddalena P., Di Francia G., and Morvillo Pasquale
RivistaPhysica Status Solidi (A) Applied Research
Volume197
Paginazione399-402
ISSN00318965
Parole chiaveAuger electron spectroscopy, Auger saturation, Composition effects, Doping (additives), Doping concentration, Light emission, Nanostructured materials, Neutralization, oxidation, Photoluminescence, Quantum efficiency, Saturation (materials composition), silicon, Silicon nanocrystals, Wet chemical process
Abstract

Photoluminescent silicon films have been fabricated starting from p-type silicon powders, by means of a purely wet-chemical process at different doping concentrations. Their light emission properties have been investigated by means of continuous wave and time-resolved photoluminescence measurements. In all the samples Auger saturation has been observed, showing that light emission from quantum confined Si nanocrystals occurs. The doping level influences the spectra, the decay times and the reactivity towards oxidizing environment. The same features are observed in samples obtained from simultaneously processing p- and n-type silicon powders. Hence, our results support the hypothesis that, during the chemical reaction, merging of p- and n-type silicon nanocrystals and subsequent doping neutralization occurs.

Note

cited By 3; Conference of Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology ; Conference Date: 10 March 2002 Through 15 March 2002; Conference Code:61122

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0038609659&doi=10.1002%2fpssa.200306533&partnerID=40&md5=1bca0927127b27008a63d13374c9cb89
DOI10.1002/pssa.200306533
Citation KeyLettieri2003399