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Influence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells

TitoloInfluence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2015
AutoriMorvillo, Pasquale, Diana R., Mucci A., Bobeico E., Ricciardi Rosa, and Minarini Carla
RivistaSolar Energy Materials and Solar Cells
Volume141
Paginazione210-217
ISSN09270248
Parole chiaveAnnealing, Annealing temperatures, butyric acid, Copolymers, Electric resistance, Electron transport layers, Electron transport properties, Heterojunctions, Inverted architectures, Inverted polymer solar cells, Metallic films, Photovoltaic, Polymer Solar Cells, Polymers, Power conversion efficiencies, Sheet resistance, Sol-gel process, Sol-gels, Solar cells, Solar power generation, Zinc oxide, ZnO
Abstract

In this work we studied the influence of the annealing treatments of a sol-gel derived ZnO electron transport layer deposited on ITO substrate, on the performances of inverted bulk heterojunction polymer solar cells using a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl] and [6,6]-phenyl C71 butyric acid methyl ester. Since the annealing treatments needed to complete the formation of the solution-processed ZnO film can modify the underlying ITO electrode, we analyzed the performance of the fabricated cells in terms of the properties of ITO and ZnO films. We found a linear relationship between the sheet resistance of the ITO layer and the series resistance of the corresponding device, which strongly influences the fill factor. The best power conversion efficiency (7%) under simulated AM 1.5G illumination of 100 mW/cm2 was achieved for the polymer solar cell fabricated using a ZnO film annealed at 150 °C for only 5 min. Higher annealing temperatures and times increase the sheet resistance of the ITO worsening the device performances. © 2015 Elsevier B.V. All ights reserved.

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cited By 14

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84931274472&doi=10.1016%2fj.solmat.2015.05.038&partnerID=40&md5=45547401afbed82d41c57b57ed6aaa14
DOI10.1016/j.solmat.2015.05.038
Citation KeyMorvillo2015210