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X-ray diffraction analysis fo GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfaces

TitoloX-ray diffraction analysis fo GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfaces
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1994
AutoriTagliente, M.A., De Caro L., Tapfer Leander, Nötzel R., Fischer A., and Ploog K.
RivistaSolid State Electronics
Volume37
Paginazione747-751
ISSN00381101
Parole chiaveCrystal defects, High index surfaces, Lattice deformation, Molecular beam epitaxy, Multilayer structures, Numerical analysis, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor device structures, Semiconductor growth, Semiconductor superlattices, Strain, Strain energy density, Strain state, Substrates, Surfaces, Takagi-Taupin equations, X ray analysis, X ray diffraction theory
Abstract

In this work, we investigate the structural properties of single and multiple AlAs/GaAs heterostructures grown on (311) and (210) GaAs surfaces by molecular beam epitaxy. The strain state and lattice deformation of epitaxial layers grown on high-index surfaces is determined. The components of the strain tensor are calculated by minimizing the strain-energy density and are implemented in the normalized strain function of the Takagi-Taupin equations of the dynamical X-ray diffraction theory for distorted crystals in order to simulate the experimental X-ray diffraction patterns. Experimental results on AlGaAs single heterostructures and AlAs/GaAs multilayer structures reveal that the epitaxial layers are pseudomorphic and show a shear strain component different from zero in contrast to structures grown on (001) substrates surfaces. The measured data are in excellent agreement with the calculated strain fields. © 1994.
Note

cited By 6
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0028410204&doi=10.1016%2f0038-1101%2894%2990291-7&partnerID=40&md5=796e5a2dd1f1e519bb8c75d206f8795e
DOI10.1016/0038-1101(94)90291-7
Citation KeyTagliente1994747