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Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates

TitoloStrain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2002
AutoriTagliente, M.A., De Caro L., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H.
RivistaJournal of Applied Physics
Volume92
Paginazione70-76
ISSN00218979
Parole chiaveAlGaN/gaN, Aluminum, Chemical compositions, Coherent interface, Diffraction peaks, Flux conditions, Gallium alloys, Gallium nitride, GaN buffer, GaN buffer layers, General expression, Heterojunctions, High resolution X ray diffraction, In-mole-fraction, InGaN/GaN, Lattice deformation, Molecular beam epitaxy, Plasma-assisted molecular beam epitaxy, Segregation effects, Semiconductor quantum wells, SiC substrates, Silicon carbide, Strain fields, Superlattices, Tensors, Unit cell size, Wurtzite heterostructures, Wurtzites, X ray diffraction, X-ray patterns, Zinc sulfide
Abstract

We analyzed by high-resolution x-ray diffraction experiments the strain status and the chemical composition in wurtzite In xGa 1-xN/GaN and Al xGa 1-xN/GaN multiple quantum wells (MQW) grown on (0001) SiC substrates by plasma-assisted molecular beam epitaxy. In order to evaluate the lattice deformation in the wurtzite heterostructures, we derived a very general expression of the x-ray incidence parameter which relates the unit cell size to the experimental diffraction peaks separation. All the strain and rotation tensors components of the heterostructures could be determined, which is essential to determine the correct chemical composition. We found a coherent interface between the GaN buffer and the Al xGa 1-xN/GaN superlattice, while a partial relaxation of the In xGa 1-xN/GaN superlattice with respect to the GaN buffer layer was revealed. The Al and In mole fraction of Al xGa 1-xN and In xGa 1-xN SL layers were determined by using Vegard's rule and simulation of the experimental x-ray patterns. We found a pronounced In segregation if the MQWs were grown under metal-stable flux condition; in contrast no appreciable segregation effect was observed under the nitrogen-stable flux condition. © 2002 American Institute of Physics.

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cited By 10

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036639912&doi=10.1063%2f1.1478789&partnerID=40&md5=9d57f432001b9058c05bfb02fb78a898
DOI10.1063/1.1478789
Citation KeyTagliente200270