| Titolo | High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2006 |
| Autori | Potì, B., Tagliente M.A., and Passaseo A. |
| Rivista | Journal of Non-Crystalline Solids |
| Volume | 352 |
| Paginazione | 2332-2334 |
| ISSN | 00223093 |
| Parole chiave | Al2O3, Atomic force microscopy, Crystal growth, Full width at half maximum (FWHM), Gallium nitride, HT-AlN buffer layer, Metallorganic chemical vapor deposition, Optimization, Sapphire, Sapphire substrates, Scanning tunneling microscopy, Substrates, Thermal effects, Thin films, X ray diffraction |
| Abstract | In this work we report on the growth and characterization of high quality MOCVD GaN film grown on Al2O3 substrates by using a HT (>1150 °C)-AlN buffer layer. We have investigated the most favorable growth conditions in terms of temperature, thickness and growth rate of AlN buffer layer in order to optimize the high temperature GaN layer. The improved morphological and structural properties of GaN layer were verified by AFM and XRD measurements. The optimized GaN layer presents a smooth surface with a rms value of 1.4 Å. The full width at half maximum (FWHM) for 800 nm thick GaN films is 144″. Furthermore PL measurements and C-V analysis confirm that in GaN layer grown on HT-AlN buffer layer defect density is drastically reduced. © 2006 Elsevier B.V. All rights reserved. |
| Note | cited By 8 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745388027&doi=10.1016%2fj.jnoncrysol.2006.01.099&partnerID=40&md5=614654d16fc3cf8f428f2539daafb903 |
| DOI | 10.1016/j.jnoncrysol.2006.01.099 |
| Citation Key | Potì20062332 |
