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Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon

TitoloGrain boundary location control by patterned metal film in excimer laser crystallized polysilicon
Tipo di pubblicazionePresentazione a Congresso
Anno di Pubblicazione1999
AutoriMariucci, L., Carluccio R., Pecora A., Fortunato G., Massussi F., Foglietti V., Della Sala Dario, and Stoemenos J.
Conference NameDiffusion and Defect Data Pt.B: Solid State Phenomena
EditoreScitec Publications Ltd., Zurich, Switzerland
Conference LocationSchwabisch Gmund, Ger
Parole chiaveAmorphous films, Amorphous silicon, Crystal growth, Crystallization, Excimer lasers, Excimer-laser crystallization, Grain boundaries, Polycrystalline materials, Semiconducting silicon, Semiconductor growth, Thin film transistors
Abstract

The control of the structural properties of polysilicon obtained by excimer laser crystallization has become of great importance to further develop the polysilicon thin-film transistors technology. In this work we have investigated a new approach to achieve a control of the lateral growth mechanism through opportune spatial modulation of the light intensity. Two different techniques, based on patterned reflective metal layers, have been used: 1) direct deposition of Cr or Al/Cr metal layers on top of the amorphous silicon film; 2) irradiation through a patterned mask in contact with the sample.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0032641744&partnerID=40&md5=ea26b7f19826625256e11a572971d545
Citation KeyMariucci1999175