Titolo | Ion assistance effects on electron beam deposited MgF2 films |
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Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
Anno di Pubblicazione | 2002 |
Autori | Alvisi, Marco, de Tomasi F., A. Patria Della, Di Giulio M., Masetti E., Perrone M.R., Protopapa Maria Lucia, and Tepore A. |
Rivista | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 20 |
Paginazione | 714-720 |
ISSN | 07342101 |
Parole chiave | Anode voltage, Electron beams, evaporation, Ion assisted electron beam evaporation, Ion beam assisted deposition, Laser damage, Laser damage fluence, Light extinction, Light reflection, Magnesium compounds, Morphology, Refractive index, Scanning electron microscopy, Thin films, Threshold voltage, Transmittance, X ray diffraction analysis |
Abstract | Thin films of MgF2 of about 300 nm thickness were deposited by the electron beam evaporation technique, without employing an assisting ion beam and at different assisting ion beam parameters. The role of the assisting ion beam on the film optical and structural properties and on the film resistance to laser damage was studied. Measurements were performed on samples soon after the film deposition and on samples left for 3 months under uncontrolled environmental conditions. The resulting data was analyzed in detail. |
Note | cited By 6 |
URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036565402&doi=10.1116%2f1.1464836&partnerID=40&md5=6401fdda01adfff859626e01a4e3e241 |
DOI | 10.1116/1.1464836 |
Citation Key | Alvisi2002714 |