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Influence of standing-wave electric field pattern on the laser damage resistance of HfO2 thin films

TitoloInfluence of standing-wave electric field pattern on the laser damage resistance of HfO2 thin films
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2002
AutoriProtopapa, Maria Lucia, Alvisi Marco, de Tomasi F., Di Giulio M., Perrone M.R., and Scaglione S.
RivistaJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Paginazione643-650
ISSN07342101
Parole chiaveCarrier concentration, Crystal structure, Deposition, Electric fields, Electron beam evaporation, Electron beams, evaporation, Extinction coefficient, Hafnium compounds, Laser beam effects, Laser damage resistance, Photoacoustic beam deflection, Refractive index, Scanning electron microscopy, Standing wave electric field pattern, Thin films, Ultraviolet radiation, X ray diffraction analysis
Abstract

HfO2 thin films of different thicknesses were deposited by the electron beam evaporation technique under the same deposition conditions. X-ray diffraction and reflectivity measurements and the film optical characterizations revealed that all the films were amorphous and have quite similar optical and structural properties. A correlation between the laser-induced damage morphology and the particular SWEF profile was found. Furthermore, laser-induced damage threshold decreased as the number of peaks in the SWEF profile increases.

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cited By 3

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036565495&doi=10.1116%2f1.1460892&partnerID=40&md5=04b824fe3c49c74586702e8883c9cacf
DOI10.1116/1.1460892
Citation KeyProtopapa2002643