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T linearity of in-plane resistivity in Bi 2Sr 2CaCu 2O 8+δ thin films

TitoloT linearity of in-plane resistivity in Bi 2Sr 2CaCu 2O 8+δ thin films
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2005
AutoriOh, S., Di Luccio Tiziana, and Eckstein J.N.
RivistaPhysical Review B - Condensed Matter and Materials Physics
Volume71
ISSN10980121
Parole chiavearticle, bismuth, Calcium, Copper, film, linear system, molecular dynamics, Oxygen, quantum mechanics, quantum yield, Strontium, superconductor, Temperature sensitivity, Thermal conductivity
Abstract

We performed a temperature and doping-dependent study of in-plane dc resistivity (IDCR) on molecular beam epitaxy grown Bi 2Sr 2CaCu 2O 8+δ thin films. By analyzing the temperature dependence of normal state IDCR as a function of doping level, we show that long-known T-linear dependence of normal state IDCR occurs not at the optimal doping (p=0.16/Cu) but at an overdoping of p=0.19/Cu, which coincides with the recently proposed putative quantum critical point. This observation suggests that p=0.19 may be a sample-independent critical doping level at least for bilayer cuprate systems. ©2005 The American Physical Society.

Note

cited By 5

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-15744404887&doi=10.1103%2fPhysRevB.71.052504&partnerID=40&md5=8d2144ad12dd4a7a5f140cdb54c992e6
DOI10.1103/PhysRevB.71.052504
Citation KeyOh2005