| Titolo | Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2007 |
| Autori | Daliento, S., Mele L., Bobeico E., Lancellotti L., and Morvillo Pasquale |
| Rivista | Solar Energy Materials and Solar Cells |
| Volume | 91 |
| Paginazione | 707-713 |
| ISSN | 09270248 |
| Parole chiave | Cell parameters, Device modeling, Electric current measurement, Electron emission, Mathematical models, Saturation currents, Silicon solar cells, Surface recombination velocity, Surface treatment |
| Abstract | A new analytical model is used to describe the emitter of silicon solar cells in order to gain information on the surface recombination velocity S. The procedure takes advantage of the combined use of experimental measurements, done to determine the emitter saturation current Joe, and analytical modelling to relate Joe to S. Several experiments have been carried out on silicon solar cells having different emitter profiles subjected to various surface treatments. The influence of the surface on significant cell parameters has been analysed. © 2007 Elsevier B.V. All rights reserved. |
| Note | cited By 18 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947270837&doi=10.1016%2fj.solmat.2006.12.007&partnerID=40&md5=a687bc4247911f63b36805d637d6fc55 |
| DOI | 10.1016/j.solmat.2006.12.007 |
| Citation Key | Daliento2007707 |
