Titolo | Characterization of thin amorphous silicon films with multiple internal reflectance spectroscopy |
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Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
Anno di Pubblicazione | 1995 |
Autori | Fameli, G., Della Sala Dario, Roca F., Pascarella F., and Grillo P. |
Rivista | Journal of Applied Physics |
Volume | 78 |
Paginazione | 7269-7276 |
ISSN | 00218979 |
Abstract | Infrared multiple internal reflection (MIR) spectroscopy has been applied here to the characterization (ex situ) of thin amorphous silicon layers on crystalline silicon substrates. The specimens are tightly clamped against a Ge prism with 45°bevel angle for the entrance and exit sides, allowing for up to 25 multiple internal reflections. This greatly enhances the thin-film absorption, and the stretching bands of SiHn bonds in amorphous Si are detected in a range of film thickness from 3 to 600 nm. Very thin films (with thickness less than 50 nm) exhibit a different hydrogen bonding compared to the thin ones, due to hydrogenated sublayers that are not visible in IR spectra for larger film thickness. Sublayers are found both at the film/substrate interface and at the film free surface. Another transitional layer, with increased concentration of SiH2 groups and considerably less than 30 nm, is found at the film/substrate interface. MIR is also applied to study the step-by-step etching in CF4/O2 of a 70-nm-thick amorphous silicon layer. This experiment is able to define the location of the sublayers. © 1995 American Institute of Physics. |
Note | cited By 2 |
URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0039889895&doi=10.1063%2f1.360374&partnerID=40&md5=69521af25660331433c7a73c46017d2d |
DOI | 10.1063/1.360374 |
Citation Key | Fameli19957269 |