| Titolo | Impurity and topological surface states in porous silicon |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2000 |
| Autori | Ninno, D., Buonocore F., Cantele G., and Iadonisi G. |
| Rivista | Physica Status Solidi (A) Applied Research |
| Volume | 182 |
| Paginazione | 285-289 |
| ISSN | 00318965 |
| Parole chiave | Approximation theory, Binding energy, Charge carriers, Electronic density of states, Impurities, Nanostructured materials, Porous silicon, Quantum nanostructure, Semiconductor quantum wires, Spectroscopic analysis, Surface photovoltage spectroscopy, Surface properties, Trapping states |
| Abstract | We have developed a method, based on the effective mass approximation, for calculating electronic states in an arbitrarily shaped quantum nanostructure. Modelling the average porous silicon nanostructure with a deformed quantum wire, the calculated shallow impurity binding energies are in good agreement with surface photovoltage spectroscopy data. We have also studied a new type of surface carrier localization due to nanostructure surface geometrical irregularities. The implications of the existence of these trapping states are discussed for porous silicon. |
| Note | cited By 2 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034428622&doi=10.1002%2f1521-396X%28200011%29182%3a1%3c285%3a%3aAID-PSSA285%3e3.0.CO%3b2-G&partnerID=40&md5=ca4140fcfe2b21eba61a3cd1571f5c6b |
| DOI | 10.1002/1521-396X(200011)182:1<285::AID-PSSA285>3.0.CO;2-G |
| Citation Key | Ninno2000285 |
