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Morphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping

TitleMorphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping
Publication TypePresentazione a Congresso
Year of Publication2014
AuthorsRe, Marilena, Di Benedetto Francesca, Pesce Emanuela, Miccoli I., Prete P., Lovergine N., and Tapfer Leander
Conference NameMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
KeywordsAluminum, Crystallographic orientations, Gallium alloys, Gallium arsenide, Helium ion microscopies, Ion microscopes, Ions, Mapping, Metal-organic vapor phase epitaxy, Metallorganic vapor phase epitaxy, Micro-structural properties, Morphological information, Morphology, Nano scale, Nanowires, Reciprocal space mapping, Semiconducting gallium, X ray diffraction, X-ray reciprocal space mapping
Abstract

In this work we present new results on the morphological and microstructural properties of GaAs-AlxGa1-xAs (x≈0.24) core-shell nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy (MOVPE). Optimized growth conditions allowed us to fabricate highly-dense arrays of vertically-aligned (i.e., along the <111> crystallographic orientation) NWs. The NW arrays were investigated by Helium Ion microscopy (HeIM) and X-ray double- and triple-axis measurements and reciprocal space mapping (RSM). We demonstrate that these techniques can be employed in order to correlate some intrinsically local morphological information with statistically relevant (i.e. averaged over millions-to-billions of NWs) data on the NW structural properties. Copyright © 2014 Materials Research Society.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84926320423&doi=10.1557%2fopl.2014.747&partnerID=40&md5=fc1756bb08f33c8d7eaeb501255cebf8
DOI10.1557/opl.2014.747
Citation KeyRe2014