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Synthesis of wide band gap nanocrystals by ion implantation

TitleSynthesis of wide band gap nanocrystals by ion implantation
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2002
AuthorsBorsella, E., C. Fernández de Julián, Garciá M.A., Mattei G., Maurizio C., Mazzoldi P., Padovani S., Sada C., Battaglin G., Cattaruzza E., Gonella F., Quaranta A., D’Acapito F., Tagliente M.A., and Tapfer Leander
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume191
Pagination447-451
ISSN0168583X
KeywordsAnnealing, Dielectric materials, Dielectric substrates, Energy gap, Ion implantation, Nanostructured materials, Photoluminescence, Substrates, Synthesis (chemical), X ray diffraction analysis
Abstract

Nanocrystals of wide band gap materials (GaN and In2O3 were synthesized by sequential ion implantation in dielectric substrates, followed by thermal annealing of the samples. Transmission electron microscopy, extended X-ray absorption fine structure spectroscopy and grazing incidence X-ray diffraction analyses confirmed the formation of GaN and In2O3 crystalline nanoparticles. Blue shift of the near-edge photoluminescence (PL) band (quantum confinement effect) was observed for GaN nanocrystals. A strong PL band peaked at 3.35 eV was detected upon excitation of In2O3 nanocrystals at 5.20 eV. © 2002 Elsevier Science B.V. All rights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036574333&doi=10.1016%2fS0168-583X%2802%2900590-6&partnerID=40&md5=4ed227b0857a5bb1a68e08236d493755
DOI10.1016/S0168-583X(02)00590-6
Citation KeyBorsella2002447